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MOSVIEW is a graphical tool for transistor-level design of analog MOS
circuits that allows users to visualize and explore the design space in
order to size and bias the transistor for a given set of specifications
and technological parameters.
The current version of MOSVIEW accepts four usual specifications for the problem of analog
transistor sizing. In all cases the design space is represented using the
normalized channel length as the abscissa and the normalized intrinsic
gain as the ordinate. In more traditional design approaches, the design
space is not fully explored because the channel length and the inversion
level are often fixed (e. g.: channel length L=2 or 3 Lmin,
gate voltage overdrive VGS - VTH=200mV).
The following technological parameters should be
given:
- Lmin: minimum channel
length [mm]
- C'ox: oxide capacitance per
unit area [fF/mm2]
- n: slope factor
- Vt: threshold voltage [V]
- m0: carrier mobility
[cm2/Vs]
- VE: the Early voltage per
unit length [V/mm]
- Wmin: minimum channel width [µm]
-
Not:
Number of treps [cm-2]
-
AVt: mismatch process parameter of
the Vt [mV.µm]
-
Aß: mismatch process parameter of
the ß [%.µm]
ß – gain factor
Four cases of transistor sizing and
bias are available to the user according to the specs, namely:
- Amplifier I: The project specifications are: a fixed
transconductance (gm), a range of intrinsic
cutoff frequencies (fT(min), fT(max)), minimum value for
the voltage gain (AVmin) and maximum gate
voltage standard deviation (SDvg(max));
- Amplifier II: The project
specifications are: a fixed transconductance (gm), a range of
frequencies (fT(min), fT(max)), minimum value for
the drain current (ID(min)) and maximum
gate voltage standard deviation (SDvg(max));
- Transconductor: The
project specifications are: a fixed transconductance (gm), a
minimum value for the cutoff frequency (Ft(min)), range
of inversion levels (if(min), if(max)) and maximum
gate voltage standard deviation (SDvg(max));
- Current Mirror: The project specifications are: drain
current (ID), minimum cutoff
frequency (fT(min)), maximum value for
the inversion level (if(max)) and maximum gate
voltage standard deviation (SDvg(max));
Download MOSVIEW.exe
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